IPN95R3K7P7ATMA1 vs IAUCN10S7N021ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN95R3K7P7ATMA1 disebabkan oleh Infineon dan IAUCN10S7N021ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPN95R3K7P7ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | 100 V |
| Continuous Drain Current (ID) at Tc | 2.0 A | 175 A |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | OptiMOS™ 7 (trench MOSFET) |
| Kemasan | PG-SOT223 (3-pin + tab, surface mount) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 C to +150 C | -55 °C to +175 °C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| FET Type | — | N-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | — | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | — | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | — | 105 nC |
| Input Capacitance (Ciss) | — | 2.98 nF |
| Output Capacitance (Coss) | — | 32 pF |
| Reverse Transfer Capacitance (Crss) | — | 7.153 nF |
| Power Dissipation (Pd) @ Tc | — | 217 W |
| Qualification | — | AEC-Q101 (Automotive) |