IPP100N12S305AKSA1 vs IPT015N10NF2SATMA1 Comparison

Detailed side-by-side comparison of IPP100N12S305AKSA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPP100N12S305AKSA1 IPT015N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology OptiMOS trench OptiMOS trench, N-channel enhancement
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
Operating Junction Temperature -55 °C to +175 °C —
Package TO-220 (PG-TO220-3-1) PG-HSOF-8-10 (9-pin, 8+tab)
Mounting Type Through Hole Surface Mount
Pin Count 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 315 A
Continuous Drain Current (ID, Ta) — 35 A
On-Resistance (RDS(on)) at VGS=10V — 1.5 mΩ
Gate-Source Threshold (VGS(th)) — 3.8 V at 267 µA
Total Power Dissipation (Ta) — 3.8 W
Total Power Dissipation (Tc) — 300 W
Operating Temperature Range — -55 °C to +175 °C
Gate Drive Voltage (typ) — 10 V
Single Pulse Avalanche Energy — [DATA_NEEDED: EAS value]
RoHS Status — Compliant

Datasheets & Resources

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