IPP100N12S305AKSA1 vs IPT015N10NF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP100N12S305AKSA1 sa pamamagitan ng Infineon at IPT015N10NF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ NakahandaInfineon
IPT015N10NF2SATMA1 - 100V 315A 1.5mΩ OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP100N12S305AKSA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS trench | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | TO-220 (PG-TO220-3-1) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Bilang ng Pin | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| Energia ng Isang Pagpupuslit ng Pagbubwis | — | [DATA_NEEDED: EAS value] |
| Tindminan RoHS | — | Compliant |