IPP100N12S305AKSA1 vs IPT015N10NF2SATMA1 Perbandingan

Perbandingan bersamaan detil IPP100N12S305AKSA1 dari Infineon dan IPT015N10NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP100N12S305AKSA1 IPT015N10NF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS trench OptiMOS trench, N-channel enhancement
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Tc 100 A —
Arus Kedip Pengecor [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket TO-220 (PG-TO220-3-1) PG-HSOF-8-10 (9-pin, 8+tab)
Tipe Mounting Through Hole Surface Mount
Jumlah Pin 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 315 A
Continuous Drain Current (ID, Ta) — 35 A
On-Resistance (RDS(on)) at VGS=10V — 1.5 mΩ
Gate-Source Threshold (VGS(th)) — 3.8 V at 267 µA
Total Power Dissipation (Ta) — 3.8 W
Total Power Dissipation (Tc) — 300 W
Rentang Suhu Kerja — -55 °C to +175 °C
Gate Drive Voltage (typ) — 10 V
Energi Pulsa Tandai — [DATA_NEEDED: EAS value]
Status RoHS — Compliant

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