IPT015N10NF2SATMA1 vs IPT008N06NM5LFATMA1 Perbandingan
Perbandingan bersamaan detil IPT015N10NF2SATMA1 dari Infineon dan IPT008N06NM5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPT015N10NF2SATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 315 A | 454 A |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| Paket | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOF-8 (single, flat-lead) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | Trench MOSFET (OptiMOS 5) |
| Gate Drive Voltage (typ) | 10 V | — |
| Energi Pulsa Tandai | [DATA_NEEDED: EAS value] | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 / Linear FET |
| Tipe Transistor | — | N-Channel MOSFET |
| Arus Kedip Pengecor | — | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | — | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | — | 3.6 V (typ, 250 µA test) |
| Power Dissipation (Tc) | — | 278 W |
| Gate Drive (recommended) | — | 10 V (logic-level compatible above 4.5 V VGS) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| REACH Status | — | Compliant |
| AEC-Q100 | — | not_qualified (industrial-grade by default) |