IR2010SPBF vs IR2110SPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IR2010SPBF tarafından Infineon ve IR2110SPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IR2010SPBF IR2110SPBF
Marka Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Yaşam Döngüsü Durumu Aktif Aktif
Configuration Half-Bridge (high + low side) —
Number of Drivers 2 (independent high/low-side outputs) —
Offset Voltage (max) 200 V —
Peak Source/Sink Current 3 A / 3 A —
Logic Input Compatibility CMOS or LSTTL, down to 3.0 V 3.3 V CMOS / LSTTL
Propagation Delay (typ) 95 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
VCC Supply Voltage (low side) 10 V to 20 V —
VB Bootstrap Supply (high side) VCC + 10 V to VCC + 20 V —
İşletim Sıcaklığı -40C to +150C —
Shutdown Feature Yes (active input) —
Paket 16-SOIC (SOIC-16) 16-pin SOIC (SO-16, DW suffix)
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi [DATA_NEEDED: MSL rating] —
RoHS Durumu Compliant (Pb-free PBF suffix) —
Drive Technology High-speed power MOSFET / IGBT driver —
Channel Matching Matched propagation delays for cross-conduction minimization —
Fonksiyon — Half-bridge gate driver
Ağ Yapısı — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
İşletim Sıcaklığı Aralığı — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

Dökümanlar & Kaynaklar

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