IRF2805PBF vs IRFB4110PBF Comparison

Detailed side-by-side comparison of IRF2805PBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF2805PBF IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.38 $1.55
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRF2805PBF β€”
FET Type N-Channel β€”
Technology HEXFET Power MOSFET (IR MOSFET) HEXFET (planar DMOS)
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc 75 A β€”
Continuous Drain Current (ID) at 25Β°C 175 A (pulsed / package-limited) β€”
On-Resistance RDS(on) max @ VGS=10V 4.7 mOhm β€”
Gate Threshold Voltage (VGS(th)) 4 V [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 150 nC β€”
Power Dissipation (PD) at Tc 330 W β€”
Maximum Junction Temperature 175 Β°C β€”
Package TO-220AB (3-pin, through-hole) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
RoHS Status Compliant (Pb-free) Compliant (Pb-free suffix)
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Configuration Single N-Channel MOSFET β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A (bond-wire limited)
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max β€” Β±20 V
On-Resistance RDS(on) max at VGS=10V β€” 4.5 mΞ©
On-Resistance RDS(on) typ at VGS=10V β€” 3.7 mΞ©
Power Dissipation (PD) at TC=25Β°C β€” 370 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Lead-Free β€” Yes (PBF suffix denotes Pb-free)

Datasheets & Resources

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