IRF2805PBF vs IRFB4110PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF2805PBF disebabkan oleh Infineon dan IRFB4110PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF2805PBF IRFB4110PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $1.55
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF2805PBF —
FET Type N-Channel —
Technology HEXFET Power MOSFET (IR MOSFET) HEXFET (planar DMOS)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc 75 A —
Continuous Drain Current (ID) at 25°C 175 A (pulsed / package-limited) —
On-Resistance RDS(on) max @ VGS=10V 4.7 mOhm —
Gate Threshold Voltage (VGS(th)) 4 V [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 150 nC —
Power Dissipation (PD) at Tc 330 W —
Maximum Junction Temperature 175 °C —
Kemasan TO-220AB (3-pin, through-hole) TO-220AB (through-hole)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant (Pb-free) Compliant (Pb-free suffix)
Gambaran Suhu Operasi -55 °C to +175 °C —
Configuration Single N-Channel MOSFET —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Lead-Free — Yes (PBF suffix denotes Pb-free)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga