IRF2805PBF vs IRFB4110PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF2805PBF sa pamamagitan ng Infineon at IRFB4110PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF2805PBF IRFB4110PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock — In Stock
Presyo ng Yunit (USD) — $1.55
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF2805PBF —
FET Type N-Channel —
Technology HEXFET Power MOSFET (IR MOSFET) HEXFET (planar DMOS)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc 75 A —
Continuous Drain Current (ID) at 25°C 175 A (pulsed / package-limited) —
On-Resistance RDS(on) max @ VGS=10V 4.7 mOhm —
Gate Threshold Voltage (VGS(th)) 4 V [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 150 nC —
Power Dissipation (PD) at Tc 330 W —
Maximum Junction Temperature 175 °C —
Packhaging TO-220AB (3-pin, through-hole) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Tindminan RoHS Compliant (Pb-free) Compliant (Pb-free suffix)
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Configuration Single N-Channel MOSFET —
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Lead-Free — Yes (PBF suffix denotes Pb-free)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita