IRF4905PBF vs IRF4905SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905PBF disebabkan oleh Infineon dan IRF4905SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF4905PBF IRF4905SPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology HEXFET (IR MOSFET) HEXFET, planar cell
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
Total Gate Charge (Qg) 120 nC 120 nC (typical per Mouser listing)
Gambaran Suhu Operasi -55 °C to +175 °C (junction) —
Kemasan TO-220AB (through-hole) D2PAK (TO-263) surface mount
Pin Configuration Gate - Drain - Source (left to right) —
Jenis Pemasangan Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Aras MSL 1 (not moisture-sensitive for TO-220) —
Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — -42 A
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Power Dissipation (PD, Tc=25C) — 170 W
Suhu Hubungan Operasi — -55 C to +150 C
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Status RoHS — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

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