IRF4905PBF vs IRF4905SPBF 比較

詳細並排比較 IRF4905PBF 由 Infineon 與 IRF4905SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF4905PBF IRF4905SPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel —
Technology HEXFET (IR MOSFET) HEXFET, planar cell
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
Total Gate Charge (Qg) 120 nC 120 nC (typical per Mouser listing)
工作溫度範圍 -55 °C to +175 °C (junction) —
封裝 TO-220AB (through-hole) D2PAK (TO-263) surface mount
Pin Configuration Gate - Drain - Source (left to right) —
安裝類型 Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等級 1 (not moisture-sensitive for TO-220) —
Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — -42 A
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Power Dissipation (PD, Tc=25C) — 170 W
工作接面溫度 — -55 C to +150 C
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
RoHS 狀態 — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

資料表與資源

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