IRF4905PBF vs IRF4905SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905PBF sa pamamagitan ng Infineon at IRF4905SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF4905PBF IRF4905SPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel —
Technology HEXFET (IR MOSFET) HEXFET, planar cell
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
Total Gate Charge (Qg) 120 nC 120 nC (typical per Mouser listing)
Hanay ng Temperature na Operasyon -55 °C to +175 °C (junction) —
Packhaging TO-220AB (through-hole) D2PAK (TO-263) surface mount
Pin Configuration Gate - Drain - Source (left to right) —
Uri ng Pagpapasok Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Level ng MSL 1 (not moisture-sensitive for TO-220) —
Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — -42 A
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Power Dissipation (PD, Tc=25C) — 170 W
Temperature ng Junction na Operasyon — -55 C to +150 C
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Tindminan RoHS — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

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