IRF530NPBF vs IRFZ44NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF530NPBF disebabkan oleh Infineon dan IRFZ44NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF530NPBF IRFZ44NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IRF530NPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Jenis Transistor N-Channel HEXFET Power MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 17 A —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 90 mOhm (max, approximate per datasheet) 17.5 mOhm
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Maximum Power Dissition (Pd) at Tc 70 W —
Suhu Hubungan Operasi -55 C to +175 C -55C to +175C
Kemasan / Case TO-220AB (through-hole) —
Jenis Pemasangan Through Hole Through Hole
Avalanche Rated Yes —
Status RoHS Compliant Compliant
Aras MSL N/A (through-hole) —
Configuration Single N-channel, 3 pins (Gate, Drain, Source) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Total Gate Charge (Qg) — 42 nC
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Kemasan — TO-220AB (3-pin + tab)
Technology — HEXFET (Advanced Process)
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

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