IRF7389TRPBF vs IRF7342PBF Comparison

Detailed side-by-side comparison of IRF7389TRPBF by Infineon and IRF7342PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7389TRPBF IRF7342PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.89
Transistor Polarity N and P Channel β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (N-Ch, Id) 7.3 A β€”
Continuous Drain Current (P-Ch, Id) -5.3 A β€”
On-Resistance RDS(on) Max 29 mOhm β€”
Power Dissipation (Pd) 2.5 W β€”
Configuration Dual N+P Complementary Half-Bridge Dual P-Channel (2 independent MOSFETs)
Technology HEXFET Generation V (IR MOSFET) HEXFET (Gen V) - P-Channel MOSFET Array
Package 8-SO (SOIC-8) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C β€”
Avalanche Rated Yes β€”
Lead Free / RoHS Lead Free / RoHS Compliant β€”
MSL Level 1 β€”
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies
Part Number β€” IRF7342PBF
Original Mfr β€” International Rectifier (now Infineon)
Drain-Source Voltage V(DSS) β€” -55 V
Continuous Drain Current I(D) β€” 3.4 A
On-Resistance R(DS(on)) β€” 0.105 ohm
Power Dissipation P(D) β€” 2 W
Package / Case β€” 8-SOIC (SO-8)
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
Gate Threshold Vgs(th) β€” [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization β€” < 100 kHz
RoHS Status β€” Compliant
Halogen Status β€” Halogen-Free
Qualification β€” JEDEC standard

Datasheets & Resources

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