IRF7389TRPBF vs IRF7342PBF Perbandingan

Perbandingan bersamaan detil IRF7389TRPBF dari Infineon dan IRF7342PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7389TRPBF IRF7342PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N and P Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (N-Ch, Id) 7.3 A —
Continuous Drain Current (P-Ch, Id) -5.3 A —
On-Resistance RDS(on) Max 29 mOhm —
Power Dissipation (Pd) 2.5 W —
Configuration Dual N+P Complementary Half-Bridge Dual P-Channel (2 independent MOSFETs)
Technology HEXFET Generation V (IR MOSFET) HEXFET (Gen V) - P-Channel MOSFET Array
Paket 8-SO (SOIC-8) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C —
Avalanche Rated Yes —
Lead Free / RoHS Lead Free / RoHS Compliant —
Level MSL 1 —
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies
Part Number — IRF7342PBF
Original Mfr — International Rectifier (now Infineon)
Drain-Source Voltage V(DSS) — -55 V
Continuous Drain Current I(D) — 3.4 A
On-Resistance R(DS(on)) — 0.105 ohm
Power Dissipation P(D) — 2 W
Paket / Case — 8-SOIC (SO-8)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Gate Threshold Vgs(th) — [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization — < 100 kHz
Status RoHS — Compliant
Halogen Status — Halogen-Free
Qualification — JEDEC standard

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon