IRF7389TRPBF vs IRF7342PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7389TRPBF sa pamamagitan ng Infineon at IRF7342PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7389TRPBF IRF7342PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Transistor Polarity N and P Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (N-Ch, Id) 7.3 A —
Continuous Drain Current (P-Ch, Id) -5.3 A —
On-Resistance RDS(on) Max 29 mOhm —
Power Dissipation (Pd) 2.5 W —
Configuration Dual N+P Complementary Half-Bridge Dual P-Channel (2 independent MOSFETs)
Technology HEXFET Generation V (IR MOSFET) HEXFET (Gen V) - P-Channel MOSFET Array
Packhaging 8-SO (SOIC-8) —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C —
Avalanche Rated Yes —
Lead Free / RoHS Lead Free / RoHS Compliant —
Level ng MSL 1 —
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies
Part Number — IRF7342PBF
Original Mfr — International Rectifier (now Infineon)
Drain-Source Voltage V(DSS) — -55 V
Continuous Drain Current I(D) — 3.4 A
On-Resistance R(DS(on)) — 0.105 ohm
Power Dissipation P(D) — 2 W
Packhaging / Kaso — 8-SOIC (SO-8)
Hanay ng Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Gate Threshold Vgs(th) — [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization — < 100 kHz
Tindminan RoHS — Compliant
Halogen Status — Halogen-Free
Qualification — JEDEC standard

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