IRF7389TRPBF vs IRF7342PBF 比較
詳細並排比較 IRF7389TRPBF 由 Infineon 與 IRF7342PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7389TRPBF | IRF7342PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Transistor Polarity | N and P Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (N-Ch, Id) | 7.3 A | — |
| Continuous Drain Current (P-Ch, Id) | -5.3 A | — |
| On-Resistance RDS(on) Max | 29 mOhm | — |
| Power Dissipation (Pd) | 2.5 W | — |
| Configuration | Dual N+P Complementary Half-Bridge | Dual P-Channel (2 independent MOSFETs) |
| Technology | HEXFET Generation V (IR MOSFET) | HEXFET (Gen V) - P-Channel MOSFET Array |
| 封裝 | 8-SO (SOIC-8) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C | — |
| Avalanche Rated | Yes | — |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| MSL 等級 | 1 | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Part Number | — | IRF7342PBF |
| Original Mfr | — | International Rectifier (now Infineon) |
| Drain-Source Voltage V(DSS) | — | -55 V |
| Continuous Drain Current I(D) | — | 3.4 A |
| On-Resistance R(DS(on)) | — | 0.105 ohm |
| Power Dissipation P(D) | — | 2 W |
| 封裝 / 外殼 | — | 8-SOIC (SO-8) |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Vgs(th) | — | [DATA_NEEDED: Vgs(th)] |
| Switching Frequency Optimization | — | < 100 kHz |
| RoHS 狀態 | — | Compliant |
| Halogen Status | — | Halogen-Free |
| Qualification | — | JEDEC standard |