IRF7389TRPBF vs IRF7342PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7389TRPBF disebabkan oleh Infineon dan IRF7342PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7389TRPBF IRF7342PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N and P Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (N-Ch, Id) 7.3 A —
Continuous Drain Current (P-Ch, Id) -5.3 A —
On-Resistance RDS(on) Max 29 mOhm —
Power Dissipation (Pd) 2.5 W —
Configuration Dual N+P Complementary Half-Bridge Dual P-Channel (2 independent MOSFETs)
Technology HEXFET Generation V (IR MOSFET) HEXFET (Gen V) - P-Channel MOSFET Array
Kemasan 8-SO (SOIC-8) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C —
Avalanche Rated Yes —
Lead Free / RoHS Lead Free / RoHS Compliant —
Aras MSL 1 —
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies
Part Number — IRF7342PBF
Original Mfr — International Rectifier (now Infineon)
Drain-Source Voltage V(DSS) — -55 V
Continuous Drain Current I(D) — 3.4 A
On-Resistance R(DS(on)) — 0.105 ohm
Power Dissipation P(D) — 2 W
Kemasan / Case — 8-SOIC (SO-8)
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Gate Threshold Vgs(th) — [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization — < 100 kHz
Status RoHS — Compliant
Halogen Status — Halogen-Free
Qualification — JEDEC standard

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