IRFB4020PBF vs IPP069N20NM6AKSA1 Comparison

Detailed side-by-side comparison of IRFB4020PBF by Infineon and IPP069N20NM6AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4020PBF IPP069N20NM6AKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.38 $4.10
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC 18 A β€”
Power Dissipation (PD) at TC 100 W β€”
RDS(on) Maximum 100 mOhm β€”
Gate-Source Voltage (VGS) Maximum 20 V β€”
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W β€”
Operating Junction Temperature 175 C (max) β€”
Package TO-220AB (through-hole) PG-TO220-3-1 (TO-220-3 through-hole, 3+tab)
Mounting Type Through Hole Through Hole
Pin Count 3 (Gate, Drain, Source) β€”
Lead-Free (PbF suffix) Yes β€”
Market Qualification Consumer β€”
Recommended Use Class-D audio amplifier and high-efficiency switching applications β€”
Continuous Drain Current (ID) at TC=25C β€” 136 A
Continuous Drain Current (ID) at TA=25C β€” 15.3 A
Power Dissipation (PD) at TC=25C β€” 300 W
Power Dissipation (PD) at TA=25C β€” 3.8 W
On-Resistance RDS(on) max at VGS=10V β€” 6.9 mΞ©
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Total Gate Charge at VGS=10V (Qg) β€” [DATA_NEEDED: Qg value]
Operating Temperature Range β€” -55C to +175C
RoHS Status β€” Compliant
Lead-Free β€” Yes
MSL Level β€” N/A (through-hole package)
Tab Connection β€” Electrically connected to Drain

Datasheets & Resources

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