IRFB4020PBF vs IPP069N20NM6AKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4020PBF sa pamamagitan ng Infineon at IPP069N20NM6AKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4020PBF IPP069N20NM6AKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC 18 A —
Power Dissipation (PD) at TC 100 W —
RDS(on) Maximum 100 mOhm —
Gate-Source Voltage (VGS) Maximum 20 V —
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W —
Temperature ng Junction na Operasyon 175 C (max) —
Packhaging TO-220AB (through-hole) PG-TO220-3-1 (TO-220-3 through-hole, 3+tab)
Uri ng Pagpapasok Through Hole Through Hole
Bilang ng Pin 3 (Gate, Drain, Source) —
Lead-Free (PbF suffix) Yes —
Market Qualification Consumer —
Recommended Use Class-D audio amplifier and high-efficiency switching applications —
Continuous Drain Current (ID) at TC=25C — 136 A
Continuous Drain Current (ID) at TA=25C — 15.3 A
Power Dissipation (PD) at TC=25C — 300 W
Power Dissipation (PD) at TA=25C — 3.8 W
On-Resistance RDS(on) max at VGS=10V — 6.9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Total Gate Charge at VGS=10V (Qg) — [DATA_NEEDED: Qg value]
Hanay ng Temperature na Operasyon — -55C to +175C
Tindminan RoHS — Compliant
Lead-Free — Yes
Level ng MSL — N/A (through-hole package)
Tab Connection — Electrically connected to Drain

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