IRFB4020PBF vs IPP069N20NM6AKSA1 Perbandingan
Perbandingan bersamaan detil IRFB4020PBF dari Infineon dan IPP069N20NM6AKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRFB4020PBF | IPP069N20NM6AKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| Suhu Hubung Kerja | 175 C (max) | — |
| Paket | TO-220AB (through-hole) | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| Tipe Mounting | Through Hole | Through Hole |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Continuous Drain Current (ID) at TC=25C | — | 136 A |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | — | 6.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Total Gate Charge at VGS=10V (Qg) | — | [DATA_NEEDED: Qg value] |
| Rentang Suhu Kerja | — | -55C to +175C |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Level MSL | — | N/A (through-hole package) |
| Tab Connection | — | Electrically connected to Drain |