IRFB4020PBF vs IPP069N20NM6AKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4020PBF disebabkan oleh Infineon dan IPP069N20NM6AKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB4020PBF IPP069N20NM6AKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC 18 A —
Power Dissipation (PD) at TC 100 W —
RDS(on) Maximum 100 mOhm —
Gate-Source Voltage (VGS) Maximum 20 V —
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W —
Suhu Hubungan Operasi 175 C (max) —
Kemasan TO-220AB (through-hole) PG-TO220-3-1 (TO-220-3 through-hole, 3+tab)
Jenis Pemasangan Through Hole Through Hole
Kiraan Pin 3 (Gate, Drain, Source) —
Lead-Free (PbF suffix) Yes —
Market Qualification Consumer —
Recommended Use Class-D audio amplifier and high-efficiency switching applications —
Continuous Drain Current (ID) at TC=25C — 136 A
Continuous Drain Current (ID) at TA=25C — 15.3 A
Power Dissipation (PD) at TC=25C — 300 W
Power Dissipation (PD) at TA=25C — 3.8 W
On-Resistance RDS(on) max at VGS=10V — 6.9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Total Gate Charge at VGS=10V (Qg) — [DATA_NEEDED: Qg value]
Gambaran Suhu Operasi — -55C to +175C
Status RoHS — Compliant
Lead-Free — Yes
Aras MSL — N/A (through-hole package)
Tab Connection — Electrically connected to Drain

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