IRFH5020TRPBF vs IRFH8201TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5020TRPBF disebabkan oleh Infineon dan IRFH8201TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH5020TRPBF IRFH8201TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide N-Channel
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A 324 A
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ 0.95 mOhm
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Pembuangan Kuasa (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Jenis Pemasangan Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Gambaran Suhu Operasi -55 °C to +150 °C (TJ max) -55C to +150C
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
Aras MSL 1 (per industry standard for PQFN-8) [DATA_NEEDED: MSL level]
Technology — StrongIRFET (trench MOSFET)
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA=25C — 49 A
Continuous Drain Current (ID) at TC=25C — 100 A
Gate Threshold Voltage (VGS(th)) — 1.35 V max
Total Gate Charge (Qg) — 56 nC at VGS=10V
Output Capacitance (Coss) — 7.33 nF
Reverse Transfer Capacitance (Crss) — 850 pF
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 156 W
Kemasan — SuperSO8 5x6 (PQFN-8) with exposed pad
Status RoHS — Compliant

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