IRFH5020TRPBF vs IRFH8201TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFH5020TRPBF sa pamamagitan ng Infineon at IRFH8201TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFH5020TRPBF | IRFH8201TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Family | HEXFET Power MOSFET | — |
| FET Type | MOSFET N-Channel, Metal Oxide | N-Channel |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A | — |
| Pulsed Drain Current (IDM) | 63 A | 324 A |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 55 mΩ | 0.95 mOhm |
| Gate Charge (Qg) typ | 11 nC | — |
| Power Dissipation (TA=25°C) | 3.6 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 8.3 W | — |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W | — |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (TJ max) | -55C to +150C |
| Qualification Standard | JEDEC (Normal level) | — |
| Gate Drive Optimization | 10 V VGS | — |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | — |
| Level ng MSL | 1 (per industry standard for PQFN-8) | [DATA_NEEDED: MSL level] |
| Technology | — | StrongIRFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25C | — | 49 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Gate Threshold Voltage (VGS(th)) | — | 1.35 V max |
| Total Gate Charge (Qg) | — | 56 nC at VGS=10V |
| Output Capacitance (Coss) | — | 7.33 nF |
| Reverse Transfer Capacitance (Crss) | — | 850 pF |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 156 W |
| Packhaging | — | SuperSO8 5x6 (PQFN-8) with exposed pad |
| Tindminan RoHS | — | Compliant |