IRFH5020TRPBF vs IRFH8201TRPBF 比較
詳細並排比較 IRFH5020TRPBF 由 Infineon 與 IRFH8201TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFH5020TRPBF | IRFH8201TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Family | HEXFET Power MOSFET | — |
| FET Type | MOSFET N-Channel, Metal Oxide | N-Channel |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A | — |
| Pulsed Drain Current (IDM) | 63 A | 324 A |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 55 mΩ | 0.95 mOhm |
| Gate Charge (Qg) typ | 11 nC | — |
| Power Dissipation (TA=25°C) | 3.6 W | — |
| 功率耗散 (TC=25°C) | 8.3 W | — |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W | — |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| 工作溫度範圍 | -55 °C to +150 °C (TJ max) | -55C to +150C |
| Qualification Standard | JEDEC (Normal level) | — |
| Gate Drive Optimization | 10 V VGS | — |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | — |
| MSL 等級 | 1 (per industry standard for PQFN-8) | [DATA_NEEDED: MSL level] |
| Technology | — | StrongIRFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25C | — | 49 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Gate Threshold Voltage (VGS(th)) | — | 1.35 V max |
| Total Gate Charge (Qg) | — | 56 nC at VGS=10V |
| Output Capacitance (Coss) | — | 7.33 nF |
| Reverse Transfer Capacitance (Crss) | — | 850 pF |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 156 W |
| 封裝 | — | SuperSO8 5x6 (PQFN-8) with exposed pad |
| RoHS 狀態 | — | Compliant |