IRFH5020TRPBF vs IRFH8201TRPBF Perbandingan

Perbandingan bersamaan detil IRFH5020TRPBF dari Infineon dan IRFH8201TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFH5020TRPBF IRFH8201TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide N-Channel
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A 324 A
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ 0.95 mOhm
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Dissipasi Listrik (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Tipe Mounting Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Rentang Suhu Kerja -55 °C to +150 °C (TJ max) -55C to +150C
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
Level MSL 1 (per industry standard for PQFN-8) [DATA_NEEDED: MSL level]
Technology — StrongIRFET (trench MOSFET)
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA=25C — 49 A
Continuous Drain Current (ID) at TC=25C — 100 A
Gate Threshold Voltage (VGS(th)) — 1.35 V max
Total Gate Charge (Qg) — 56 nC at VGS=10V
Output Capacitance (Coss) — 7.33 nF
Reverse Transfer Capacitance (Crss) — 850 pF
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 156 W
Paket — SuperSO8 5x6 (PQFN-8) with exposed pad
Status RoHS — Compliant

Spek dan Sumber

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