IRFP260MPBF vs IRFP250MPBF Comparison

Detailed side-by-side comparison of IRFP260MPBF by Infineon and IRFP250MPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP260MPBF IRFP250MPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.85 $2.55
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide Semiconductor) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 200 V β€”
Continuous Drain Current (ID) at Tc=25C 50 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
Power Dissipation (PD) at Tc=25C 300 W β€”
On-Resistance RDS(on) max 40 mOhm β€”
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] β€”
Input Capacitance Ciss 1560 pF β€”
Total Gate Charge Qg [DATA_NEEDED: Qg] β€”
Operating Temperature Range -55C to +175C β€”
Package / Case TO-247AC (3-lead through-hole) TO-247AC (3-pin + tab)
Mounting Type Through Hole Through Hole
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes Yes
MSL Level Not Applicable (through-hole) 1 (unlimited)
Part Number β€” IRFP250MPBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (Vds) β€” 200 V
Continuous Drain Current (Id) at Tc=25C β€” 30 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) β€” 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) β€” 4 V (typ)
Total Gate Charge (Qg) β€” 82 nC
Power Dissipation (Pd) at Tc=25C β€” 214 W
Operating Junction Temperature β€” -55C to +175C
Number of Pins β€” 3

Datasheets & Resources

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