IRFP260MPBF vs IRFP250MPBF Perbandingan

Perbandingan bersamaan detil IRFP260MPBF dari Infineon dan IRFP250MPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFP260MPBF IRFP250MPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $2,55
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max 40 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Input Capacitance Ciss 1560 pF —
Total Gate Charge Qg [DATA_NEEDED: Qg] —
Rentang Suhu Kerja -55C to +175C —
Paket / Case TO-247AC (3-lead through-hole) TO-247AC (3-pin + tab)
Tipe Mounting Through Hole Through Hole
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes Yes
Level MSL Not Applicable (through-hole) 1 (unlimited)
Part Number — IRFP250MPBF
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 200 V
Continuous Drain Current (Id) at Tc=25C — 30 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) — 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 4 V (typ)
Total Gate Charge (Qg) — 82 nC
Power Dissipation (Pd) at Tc=25C — 214 W
Suhu Hubung Kerja — -55C to +175C
Jumlah Pin — 3

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