IRFP260MPBF vs IRFP250MPBF Сравнение
Подробное сравнение бок о бок IRFP260MPBF от Infineon и IRFP250MPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFP260MPBF | IRFP250MPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,85 | $2,55 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max | 40 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance Ciss | 1560 pF | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg] | — |
| Диапазон рабочих температур | -55C to +175C | — |
| Корпус / Типоразмер | TO-247AC (3-lead through-hole) | TO-247AC (3-pin + tab) |
| Тип монтажа | Through Hole | Through Hole |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Avalanche Rated | Yes | Yes |
| Уровень MSL | Not Applicable (through-hole) | 1 (unlimited) |
| Part Number | — | IRFP250MPBF |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 75 mOhm max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 4 V (typ) |
| Total Gate Charge (Qg) | — | 82 nC |
| Power Dissipation (Pd) at Tc=25C | — | 214 W |
| Рабочая температура перехода | — | -55C to +175C |
| Количество выводов | — | 3 |