IRFP260MPBF vs IRFP250MPBF 比較
詳細な並列比較: IRFP260MPBF メーカー: Infineon および IRFP250MPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFP260MPBF | IRFP250MPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.85 | $2.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max | 40 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance Ciss | 1560 pF | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg] | — |
| 動作温度範囲 | -55C to +175C | — |
| パッケージ / ケース | TO-247AC (3-lead through-hole) | TO-247AC (3-pin + tab) |
| 実装タイプ | Through Hole | Through Hole |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Avalanche Rated | Yes | Yes |
| MSLレベル | Not Applicable (through-hole) | 1 (unlimited) |
| Part Number | — | IRFP250MPBF |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 75 mOhm max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 4 V (typ) |
| Total Gate Charge (Qg) | — | 82 nC |
| Power Dissipation (Pd) at Tc=25C | — | 214 W |
| 動作接合温度 | — | -55C to +175C |
| ピン数 | — | 3 |