IRFP260MPBF vs IRFP250MPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP260MPBF disebabkan oleh Infineon dan IRFP250MPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFP260MPBF IRFP250MPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max 40 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Input Capacitance Ciss 1560 pF —
Total Gate Charge Qg [DATA_NEEDED: Qg] —
Gambaran Suhu Operasi -55C to +175C —
Kemasan / Case TO-247AC (3-lead through-hole) TO-247AC (3-pin + tab)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes Yes
Aras MSL Not Applicable (through-hole) 1 (unlimited)
Part Number — IRFP250MPBF
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 200 V
Continuous Drain Current (Id) at Tc=25C — 30 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) — 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 4 V (typ)
Total Gate Charge (Qg) — 82 nC
Power Dissipation (Pd) at Tc=25C — 214 W
Suhu Hubungan Operasi — -55C to +175C
Bilangan Pin — 3

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