IRFP260MPBF vs IRFP250MPBF 比較

詳細並排比較 IRFP260MPBF 由 Infineon 與 IRFP250MPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFP260MPBF IRFP250MPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) — $2.55
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max 40 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Input Capacitance Ciss 1560 pF —
Total Gate Charge Qg [DATA_NEEDED: Qg] —
工作溫度範圍 -55C to +175C —
封裝 / 外殼 TO-247AC (3-lead through-hole) TO-247AC (3-pin + tab)
安裝類型 Through Hole Through Hole
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes Yes
MSL 等級 Not Applicable (through-hole) 1 (unlimited)
Part Number — IRFP250MPBF
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (Vds) — 200 V
Continuous Drain Current (Id) at Tc=25C — 30 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) — 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 4 V (typ)
Total Gate Charge (Qg) — 82 nC
Power Dissipation (Pd) at Tc=25C — 214 W
工作接面溫度 — -55C to +175C
腳位數 — 3

資料表與資源

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