IRFR120NTRLPBF vs IRL540NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR120NTRLPBF disebabkan oleh Infineon dan IRL540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR120NTRLPBF IRL540NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±16 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] Logic-level
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC 49.3 nC
Power Dissipation (PD) at TC=25C 48 W —
Gambaran Suhu Hubungan Operasi -55C to +175C —
Avalanche Energy Rated Yes (fully avalanche rated) Yes (single-pulse)
Kemasan PG-TO252-3 (DPAK) TO-263 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant (LPBF suffix indicates lead-free)
Lead-Free Finish Yes (Pb-free) —
Continuous Drain Current (ID) at Tc=25°C — 36 A
On-Resistance (RDS(on)) max @ VGS=10V — 44 mΩ
On-Resistance (RDS(on)) max @ VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Power Dissipation (PD) at Tc=25°C — 140 W
Power Dissipation (PD) at TA=25°C — 3.8 W
Gambaran Suhu Operasi — -55°C to +175°C
Aras MSL — [DATA_NEEDED: MSL rating]

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