IRFR120NTRLPBF vs IRL540NSTRLPBF 比較

詳細並排比較 IRFR120NTRLPBF 由 Infineon 與 IRL540NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFR120NTRLPBF IRL540NSTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±16 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] Logic-level
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC 49.3 nC
Power Dissipation (PD) at TC=25C 48 W —
工作接面溫度範圍 -55C to +175C —
Avalanche Energy Rated Yes (fully avalanche rated) Yes (single-pulse)
封裝 PG-TO252-3 (DPAK) TO-263 (D2PAK)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant (LPBF suffix indicates lead-free)
Lead-Free Finish Yes (Pb-free) —
Continuous Drain Current (ID) at Tc=25°C — 36 A
On-Resistance (RDS(on)) max @ VGS=10V — 44 mΩ
On-Resistance (RDS(on)) max @ VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Power Dissipation (PD) at Tc=25°C — 140 W
Power Dissipation (PD) at TA=25°C — 3.8 W
工作溫度範圍 — -55°C to +175°C
MSL 等級 — [DATA_NEEDED: MSL rating]

資料表與資源

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