IRFR3607TRPBF vs IRFR4620TRLPBF Perbandingan

Perbandingan bersamaan detil IRFR3607TRPBF dari Infineon dan IRFR4620TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3607TRPBF IRFR4620TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc) 56 A —
Calculated Die Drain Current 80 A —
On-State Resistance (RDS(on)) 9 mOhm @ VGS=10V, ID=46A —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 56 nC —
Gate-to-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD, Tc) 140 W —
Thermal Resistance (RthJC) 1.0 C/W —
Rentang Suhu Kerja -55C to +175C (TJ max 175C per datasheet convention) —
Paket TO-252AA (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET (planar DMOS) IR MOSFET
Avalanche SOA Fully characterized —
RoHS / Lead-Free Compliant / Pb-free (PBF suffix, JESD-609 e3) —
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
Paket / Case — TO-252AA (DPAK)
Suhu Kerja — -55C to +175C
Lead Free — Yes
Status RoHS — Compliant
Level MSL — 1 (Unlimited)

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