IRLML2060TRPBF vs IRFML8244TRPBF Comparison

Detailed side-by-side comparison of IRLML2060TRPBF by Infineon and IRFML8244TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLML2060TRPBF IRFML8244TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID) at TA=25C 1.2 A —
Pulsed Drain Current (IDM) 4.8 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 12 V +/- 20 V
Gate Threshold Voltage (VGS(th)) 1.8 V typical [DATA_NEEDED: VGS(th) typical and min/max]
RDS(on) max at VGS=10V 480 mOhm —
RDS(on) max at VGS=4.5V 650 mOhm (typical 580 mOhm) —
Power Dissipation (PD) at TA=25C 1.25 W —
Thermal Resistance Junction-to-Ambient (RthetaJA) 100 C/W —
Operating Junction Temperature -55C to +150C —
Package SOT-23 (Micro3, 3-pin) SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount Surface Mount
Technology IR HEXFET (Trench Gate) IR MOSFET (HEXFET)
RoHS Status Compliant Compliant (Pb-free, halogen-free)
Halogen Free Yes —
MSL Level MSL1 MSL1
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID) — 5.8 A
RDS(on) max @ VGS=10V — 24 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — 5.4 nC
Power Dissipation (PD) max — 1.25 W (Ta)
Operating Temperature Range — -55 C to +150 C (junction)
Pin Configuration — Industry-standard SOT-23 pinout (G-D-S)
Qualification — Consumer grade

Datasheets & Resources

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