IRLML2060TRPBF vs IRFML8244TRPBF 比較

詳細並排比較 IRLML2060TRPBF 由 Infineon 與 IRFML8244TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML2060TRPBF IRLML2060TRPBF - 60V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2060TRPBF - 60V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2060TRPBF ✓ 啟用中
Infineon
IRFML8244TRPBF IRFML8244TRPBF - 25V 5.8A N-Ch MOSFET, 24mOhm | Infineon

IRFML8244TRPBF - 25V 5.8A N-Ch MOSFET, 24mOhm | Infineon

IRFML8244TRPBF ✓ 啟用中

規格比較

參數 IRLML2060TRPBF IRFML8244TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID) at TA=25C 1.2 A —
Pulsed Drain Current (IDM) 4.8 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 12 V +/- 20 V
Gate Threshold Voltage (VGS(th)) 1.8 V typical [DATA_NEEDED: VGS(th) typical and min/max]
RDS(on) max at VGS=10V 480 mOhm —
RDS(on) max at VGS=4.5V 650 mOhm (typical 580 mOhm) —
Power Dissipation (PD) at TA=25C 1.25 W —
Thermal Resistance Junction-to-Ambient (RthetaJA) 100 C/W —
工作接面溫度 -55C to +150C —
封裝 SOT-23 (Micro3, 3-pin) SOT-23-3 (TO-236-3, SC-59)
安裝類型 Surface Mount Surface Mount
Technology IR HEXFET (Trench Gate) IR MOSFET (HEXFET)
RoHS 狀態 Compliant Compliant (Pb-free, halogen-free)
無鹵素 Yes —
MSL 等級 MSL1 MSL1
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) — 5.8 A
RDS(on) max @ VGS=10V — 24 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — 5.4 nC
Power Dissipation (PD) max — 1.25 W (Ta)
工作溫度範圍 — -55 C to +150 C (junction)
Pin Configuration — Industry-standard SOT-23 pinout (G-D-S)
Qualification — Consumer grade

資料表與資源

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