IRLML2060TRPBF vs IRFML8244TRPBF Perbandingan

Perbandingan bersamaan detil IRLML2060TRPBF dari Infineon dan IRFML8244TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML2060TRPBF IRFML8244TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID) at TA=25C 1.2 A —
Pulsed Drain Current (IDM) 4.8 A [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 12 V +/- 20 V
Gate Threshold Voltage (VGS(th)) 1.8 V typical [DATA_NEEDED: VGS(th) typical and min/max]
RDS(on) max at VGS=10V 480 mOhm —
RDS(on) max at VGS=4.5V 650 mOhm (typical 580 mOhm) —
Power Dissipation (PD) at TA=25C 1.25 W —
Thermal Resistance Junction-to-Ambient (RthetaJA) 100 C/W —
Suhu Hubung Kerja -55C to +150C —
Paket SOT-23 (Micro3, 3-pin) SOT-23-3 (TO-236-3, SC-59)
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET (Trench Gate) IR MOSFET (HEXFET)
Status RoHS Compliant Compliant (Pb-free, halogen-free)
Bebas Halogen Yes —
Level MSL MSL1 MSL1
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) — 5.8 A
RDS(on) max @ VGS=10V — 24 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — 5.4 nC
Power Dissipation (PD) max — 1.25 W (Ta)
Rentang Suhu Kerja — -55 C to +150 C (junction)
Pin Configuration — Industry-standard SOT-23 pinout (G-D-S)
Qualification — Consumer grade

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