IRLML2060TRPBF vs IRLML0030TRPBF Comparison
Detailed side-by-side comparison of IRLML2060TRPBF by Infineon and IRLML0030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML2060TRPBF | IRLML0030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.13 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| Pulsed Drain Current (IDM) | 4.8 A | β |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | β |
| RDS(on) max at VGS=10V | 480 mOhm | β |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | β |
| Power Dissipation (PD) at TA=25C | 1.25 W | 1.3 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | SOT-23 (Micro3, 3-pin) | Micro3 / SOT-23 (3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | IR HEXFET Power MOSFET |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| MSL Level | MSL1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | β | 30 V |
| Drain-Source On-Resistance (RDS(on)) max | β | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | β | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | β | 3.6 nC typical |
| Operating Temperature Range | β | -55C to +150C |
| Soldering | β | Wave-solder capable |
| Qualification | β | JEDEC standard |