IRLML2060TRPBF vs IRLML0030TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML2060TRPBF disebabkan oleh Infineon dan IRLML0030TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML2060TRPBF | IRLML0030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | — |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | 1.3 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | SOT-23 (Micro3, 3-pin) | Micro3 / SOT-23 (3-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | IR HEXFET Power MOSFET |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Aras MSL | MSL1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |