IRLML2060TRPBF vs IRLML0030TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML2060TRPBF sa pamamagitan ng Infineon at IRLML0030TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML2060TRPBF | IRLML0030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | — |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | 1.3 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | SOT-23 (Micro3, 3-pin) | Micro3 / SOT-23 (3-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | IR HEXFET Power MOSFET |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Level ng MSL | MSL1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |