IRLML2060TRPBF vs IRLML0030TRPBF 比較
詳細並排比較 IRLML2060TRPBF 由 Infineon 與 IRLML0030TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLML2060TRPBF | IRLML0030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | — |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | 1.3 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 | SOT-23 (Micro3, 3-pin) | Micro3 / SOT-23 (3-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | IR HEXFET Power MOSFET |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| MSL 等級 | MSL1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| 工作溫度範圍 | — | -55C to +150C |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |