IRLML2060TRPBF vs IRLML0030TRPBF Perbandingan
Perbandingan bersamaan detil IRLML2060TRPBF dari Infineon dan IRLML0030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML2060TRPBF | IRLML0030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | — |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | 1.3 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Paket | SOT-23 (Micro3, 3-pin) | Micro3 / SOT-23 (3-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | IR HEXFET Power MOSFET |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Level MSL | MSL1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Rentang Suhu Kerja | — | -55C to +150C |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |