IS43TR16256AL-107MBLI vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of IS43TR16256AL-107MBLI by ISSI, Integrated Silicon Solution Inc and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI β Active
Specification Comparison
| Parameter | IS43TR16256AL-107MBLI | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.00 | $3.98 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | β |
| Organization | 256M x 16 | 256M x 16 |
| Clock Speed | 933 MHz | β |
| Data Rate | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Access Time | 20 ns | β |
| Supply Voltage | 1.35V (backward compatible to 1.5V) | β |
| Package / Case | 96-TWBGA (9x13mm) | β |
| Mounting Type | Surface Mount | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | β |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes | β |
| RoHS Status | Compliant | β |
| Memory Interface | Parallel | β |
| Density | β | 4Gb |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Package | β | 96-ball FBGA |
| Ball Pitch | β | 0.8mm |
| CAS Latency (CL) | β | 11, 12, 13 |
| Operating Temperature Range | β | 0Β°C to +95Β°C (Tcase) |
| Interface | β | 16-bit I/O |
| On-Die Termination (ODT) | β | Yes |
| ZQ Calibration | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Partial Array Self-Refresh | β | Yes |
| RoHS | β | Compliant |