IS43TR16256AL-107MBLI vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IS43TR16256AL-107MBLI disebabkan oleh ISSI, Integrated Silicon Solution Inc dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IS43TR16256AL-107MBLI | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Clock Speed | 933 MHz | — |
| Kadar Data | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35V (backward compatible to 1.5V) | — |
| Kemasan / Case | 96-TWBGA (9x13mm) | — |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes | — |
| Status RoHS | Compliant | — |
| Memory Interface | Parallel | — |
| Density | — | 4Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Kemasan | — | 96-ball FBGA |
| Ball Pitch | — | 0.8mm |
| CAS Latency (CL) | — | 11, 12, 13 |
| Gambaran Suhu Operasi | — | 0°C to +95°C (Tcase) |
| Antaramuka | — | 16-bit I/O |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |