IS43TR16256AL-107MBLI vs H5TC4G63AFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IS43TR16256AL-107MBLI sa pamamagitan ng ISSI, Integrated Silicon Solution Inc at H5TC4G63AFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IS43TR16256AL-107MBLI | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $3.98 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Clock Speed | 933 MHz | — |
| Rate ng Data | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Access Time | 20 ns | — |
| Volte ng Pagbibigay | 1.35V (backward compatible to 1.5V) | — |
| Packhaging / Kaso | 96-TWBGA (9x13mm) | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes | — |
| Tindminan RoHS | Compliant | — |
| Memory Interface | Parallel | — |
| Density | — | 4Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Packhaging | — | 96-ball FBGA |
| Ball Pitch | — | 0.8mm |
| CAS Latency (CL) | — | 11, 12, 13 |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (Tcase) |
| Interface | — | 16-bit I/O |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |