IS43TR16256AL-107MBLI vs H5TC4G63AFR-PBA Perbandingan
Perbandingan bersamaan detil IS43TR16256AL-107MBLI dari ISSI, Integrated Silicon Solution Inc dan H5TC4G63AFR-PBA dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IS43TR16256AL-107MBLI | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3,98 |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Clock Speed | 933 MHz | — |
| Laju Data | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Access Time | 20 ns | — |
| Tegangan Pemuat | 1.35V (backward compatible to 1.5V) | — |
| Paket / Case | 96-TWBGA (9x13mm) | — |
| Tipe Mounting | Surface Mount | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes | — |
| Status RoHS | Compliant | — |
| Memory Interface | Parallel | — |
| Density | — | 4Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Paket | — | 96-ball FBGA |
| Ball Pitch | — | 0.8mm |
| CAS Latency (CL) | — | 11, 12, 13 |
| Rentang Suhu Kerja | — | 0°C to +95°C (Tcase) |
| Antarmuka | — | 16-bit I/O |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |