IS43TR16256AL-107MBLI vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of IS43TR16256AL-107MBLI by ISSI, Integrated Silicon Solution Inc and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI β Active
Specification Comparison
| Parameter | IS43TR16256AL-107MBLI | K4B4G1646E-BYMA |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.00 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | β |
| Organization | 256M x 16 | 256M x 16 |
| Clock Speed | 933 MHz | β |
| Data Rate | 1866 Mbps | 1866 Mbps/pin |
| Access Time | 20 ns | β |
| Supply Voltage | 1.35V (backward compatible to 1.5V) | 1.35 V (1.28 V to 1.575 V) |
| Package / Case | 96-TWBGA (9x13mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0Β°C to +95Β°C |
| Number of Banks | 8 | β |
| Burst Length | 8 and 4 | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes | β |
| RoHS Status | Compliant | β |
| Memory Interface | Parallel | β |
| Density | β | 4 Gb |
| Clock Frequency | β | 933 MHz |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Package | β | FBGA-96 |
| RoHS | β | Compliant |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Number of Pins | β | 96 |