IS43TR16256AL-107MBLI vs K4B4G1646E-BYMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IS43TR16256AL-107MBLI disebabkan oleh ISSI, Integrated Silicon Solution Inc dan K4B4G1646E-BYMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IS43TR16256AL-107MBLI | K4B4G1646E-BYMA |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.32 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Clock Speed | 933 MHz | — |
| Kadar Data | 1866 Mbps | 1866 Mbps/pin |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35V (backward compatible to 1.5V) | 1.35 V (1.28 V to 1.575 V) |
| Kemasan / Case | 96-TWBGA (9x13mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0°C to +95°C |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes | — |
| Status RoHS | Compliant | — |
| Memory Interface | Parallel | — |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Kemasan | — | FBGA-96 |
| RoHS | — | Compliant |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Bilangan Pin | — | 96 |