IS43TR16256AL-107MBLI vs K4B4G1646E-BYMA 比較
詳細並排比較 IS43TR16256AL-107MBLI 由 ISSI, Integrated Silicon Solution Inc 與 K4B4G1646E-BYMA 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ 啟用中
規格比較
| 參數 | IS43TR16256AL-107MBLI | K4B4G1646E-BYMA |
|---|---|---|
| 品牌 | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $14.32 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 |
| Clock Speed | 933 MHz | — |
| 資料速率 | 1866 Mbps | 1866 Mbps/pin |
| Access Time | 20 ns | — |
| 供應電壓 | 1.35V (backward compatible to 1.5V) | 1.35 V (1.28 V to 1.575 V) |
| 封裝 / 外殼 | 96-TWBGA (9x13mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0°C to +95°C |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes | — |
| RoHS 狀態 | Compliant | — |
| Memory Interface | Parallel | — |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| 封裝 | — | FBGA-96 |
| RoHS | — | Compliant |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| 腳位數 | — | 96 |